Publication:

Impact of Si-thickness on interface and device properties for Si-passivated Ge pMOSFETs

Date

2008
Proceedings Paper
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dc.contributor.authorMartens, Koen
dc.contributor.authorMitard, Jerome
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorMeuris, Marc
dc.contributor.authorMaes, Herman
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMinucci, F.
dc.contributor.authorCrupi, Felice
dc.contributor.imecauthorMartens, Koen
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecMartens, Koen::0000-0001-7135-5536
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-17T08:51:40Z
dc.date.available2021-10-17T08:51:40Z
dc.date.embargo9999-12-31
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14132
dc.source.beginpage138
dc.source.conference38th European Solid-State Device Research Conference - ESSDERC
dc.source.conferencedate15/09/2008
dc.source.conferencelocationEdinburgh UK
dc.source.endpage141
dc.title

Impact of Si-thickness on interface and device properties for Si-passivated Ge pMOSFETs

dc.typeProceedings paper
dspace.entity.typePublication
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