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Performance of high-k gate dielectric graphene field-effect devices

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dc.contributor.authorKlekachev, Alexander
dc.contributor.authorCantoro, Mirco
dc.contributor.authorNourbakhsh, Amirhasan
dc.contributor.authorvan der Veen, Marleen
dc.contributor.authorClemente, Francesca
dc.contributor.authorSels, Bert
dc.contributor.authorHeyns, Marc
dc.contributor.authorDe Gendt, Stefan
dc.contributor.imecauthorvan der Veen, Marleen
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecvan der Veen, Marleen::0000-0002-9402-8922
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-17T23:30:22Z
dc.date.available2021-10-17T23:30:22Z
dc.date.embargo9999-12-31
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15605
dc.source.beginpage1315
dc.source.conference215th ECS Meeting
dc.source.conferencedate24/05/2009
dc.source.conferencelocationSan Francisco, CA USA
dc.title

Performance of high-k gate dielectric graphene field-effect devices

dc.typeMeeting abstract
dspace.entity.typePublication
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