Publication:

Voltage- and temperature-dependent reliability of the set/reset switching in TiN/HfO2/Pt resistive RAM

Date

2010-12
Proceedings Paper
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dc.contributor.authorChen, Yangyin
dc.contributor.authorGoux, Ludovic
dc.contributor.authorPantisano, Luigi
dc.contributor.authorWang, XinPeng
dc.contributor.authorDegraeve, Robin
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorJurczak, Gosia
dc.contributor.authorWouters, Dirk
dc.contributor.authorAltimime, Laith
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorChen, Yangyin
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.accessioned2021-10-18T15:32:57Z
dc.date.available2021-10-18T15:32:57Z
dc.date.issued2010-12
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16851
dc.source.beginpage32-1
dc.source.conference41st IEEE Semiconductor Interface Specialists Conference - SISC
dc.source.conferencedate2/12/2010
dc.source.conferencelocationSan Diego, CA USA
dc.source.endpage32-2
dc.title

Voltage- and temperature-dependent reliability of the set/reset switching in TiN/HfO2/Pt resistive RAM

dc.typeProceedings paper
dspace.entity.typePublication
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