Publication:

HfO2 atomic layer deposition using HfCl4/H2O: the first reaction cycle

Date

2008
Proceedings Paper
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dc.contributor.authorNyns, Laura
dc.contributor.authorDelabie, Annelies
dc.contributor.authorCaymax, Matty
dc.contributor.authorHeyns, Marc
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorVinckier, Chris
dc.contributor.authorDe Gendt, Stefan
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-17T09:22:28Z
dc.date.available2021-10-17T09:22:28Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14230
dc.identifier.urlhttp://ecsdl.aip.org/ECST
dc.source.beginpage257
dc.source.conferenceAtomic Layer Deposition Applications 4
dc.source.conferencedate12/10/2008
dc.source.conferencelocationHonolulu, HI USA
dc.source.endpage267
dc.title

HfO2 atomic layer deposition using HfCl4/H2O: the first reaction cycle

dc.typeProceedings paper
dspace.entity.typePublication
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