Publication:
200 V enhancement-mode p-GaN HEMTs fabricated on 200 mm GaN-on-SOI with trench isolation for monolithic integration
Date
Loading...
Journal
Abstract
Description
Statistics
Views
2029 since deposited on 2021-10-24
2last month
1last week
Acq. date: 2026-02-25
Citations
Statistics
Views
2029 since deposited on 2021-10-24
2last month
1last week
Acq. date: 2026-02-25
Citations