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Forked-contact and dynamically-doped nanosheets to enhance Si and 2D-material devices at the limit of scaling

 
dc.contributor.authorAfzalian, Aryan
dc.contributor.authorAhmed, Zubair
dc.contributor.authorRyckaert, Julien
dc.contributor.imecauthorAfzalian, Aryan
dc.contributor.imecauthorAhmed, Zubair
dc.contributor.imecauthorRyckaert, Julien
dc.contributor.orcidimecAfzalian, Aryan::0000-0002-5260-0281
dc.date.accessioned2023-06-30T08:54:30Z
dc.date.available2023-01-26T03:20:24Z
dc.date.available2023-06-30T08:54:30Z
dc.date.issued2023
dc.identifier.doi10.1016/j.sse.2022.108524
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/41028
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD
dc.source.beginpageArt.: 108524
dc.source.endpagena
dc.source.issueJanuary
dc.source.journalSOLID-STATE ELECTRONICS
dc.source.numberofpages4
dc.source.volume199
dc.title

Forked-contact and dynamically-doped nanosheets to enhance Si and 2D-material devices at the limit of scaling

dc.typeJournal article
dspace.entity.typePublication
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