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Cyclotron resonance of 2D electrons and Si-delta-doped InSb layers grown on GaAs

Date

1995
Journal article
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dc.contributor.authorVan Bockstal, L.
dc.contributor.authorMahy, M.
dc.contributor.authorDe Keyser, A.
dc.contributor.authorHoeks, W.
dc.contributor.authorHerlach, F.
dc.contributor.authorPeeters, F. M.
dc.contributor.authorVan de Graaf, Willem
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.accessioned2021-09-29T13:18:23Z
dc.date.available2021-09-29T13:18:23Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/926
dc.source.beginpage466
dc.source.endpage9
dc.source.issue1_4
dc.source.journalPhysica B
dc.source.volume211
dc.title

Cyclotron resonance of 2D electrons and Si-delta-doped InSb layers grown on GaAs

dc.typeJournal article
dspace.entity.typePublication
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