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Active trap determination at the interface of Ge and In0.53Ga0.47As substrates with dielectric layers

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dc.contributor.authorMolle, A.
dc.contributor.authorBaldovino, S.
dc.contributor.authorLamagna, L.
dc.contributor.authorSpiga, S.
dc.contributor.authorLamperti, A.
dc.contributor.authorFanciulli, M.
dc.contributor.authorTsoutsou, D.
dc.contributor.authorGolias, E.
dc.contributor.authordimoulas, A.
dc.contributor.authorBrammertz, Guy
dc.contributor.authorMerckling, Clement
dc.contributor.authorCaymax, Matty
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.date.accessioned2021-10-19T16:28:26Z
dc.date.available2021-10-19T16:28:26Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19447
dc.source.beginpage203
dc.source.conferencePhysics and Technology of High-k Materials 9
dc.source.conferencedate9/10/2011
dc.source.conferencelocationBoston, MA USA
dc.source.endpage221
dc.title

Active trap determination at the interface of Ge and In0.53Ga0.47As substrates with dielectric layers

dc.typeProceedings paper
dspace.entity.typePublication
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