Publication:

BTI reliability of high-mobility channel devices: SiGe, Ge and InGaAs

Date

2014
Proceedings Paper
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dc.contributor.authorFranco, Jacopo
dc.contributor.authorKaczer, Ben
dc.contributor.authorRoussel, Philippe
dc.contributor.authorCho, Moon Ju
dc.contributor.authorGrasser, Tibor
dc.contributor.authorMitard, Jerome
dc.contributor.authorArimura, Hiroaki
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorCott, Daire
dc.contributor.authorWaldron, Niamh
dc.contributor.authorZhou, Daisy
dc.contributor.authorVais, Abhitosh
dc.contributor.authorLin, Dennis
dc.contributor.authorAlian, AliReza
dc.contributor.authorPourghaderi, Mohammad Ali
dc.contributor.authorMartens, Koen
dc.contributor.authorSioncke, Sonja
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorCott, Daire
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorZhou, Daisy
dc.contributor.imecauthorVais, Abhitosh
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorMartens, Koen
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecVais, Abhitosh::0000-0002-0317-7720
dc.contributor.orcidimecMartens, Koen::0000-0001-7135-5536
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-22T01:31:54Z
dc.date.available2021-10-22T01:31:54Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23831
dc.source.beginpagena
dc.source.conferenceIEEE Integrated International Reliability Workshop - IIRW
dc.source.conferencedate12/10/2014
dc.source.conferencelocationSouth Lake Taho, CA USA
dc.title

BTI reliability of high-mobility channel devices: SiGe, Ge and InGaAs

dc.typeProceedings paper
dspace.entity.typePublication
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