Publication:

Copper oxide direct bonding of 200 mm CMOS wafers with five metal levels and TSVs: morphological and electrical characterization

Date

2016
Proceedings Paper
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dc.contributor.authorCavaco, Celso
dc.contributor.authorPeng, Lan
dc.contributor.authorLavizzari, Simone
dc.contributor.authorClaes, Jesse
dc.contributor.authorVan Hoovels, Nele
dc.contributor.authorGuerrieri, Stefano
dc.contributor.authorSabuncuoglu Tezcan, Deniz
dc.contributor.authorOsman, Haris
dc.contributor.imecauthorCavaco, Celso
dc.contributor.imecauthorPeng, Lan
dc.contributor.imecauthorClaes, Jesse
dc.contributor.imecauthorVan Hoovels, Nele
dc.contributor.imecauthorSabuncuoglu Tezcan, Deniz
dc.contributor.imecauthorOsman, Haris
dc.contributor.orcidimecCavaco, Celso::0000-0001-9079-338X
dc.contributor.orcidimecPeng, Lan::0000-0003-1824-126X
dc.contributor.orcidimecSabuncuoglu Tezcan, Deniz::0000-0002-9237-7862
dc.date.accessioned2021-10-23T10:12:20Z
dc.date.available2021-10-23T10:12:20Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26398
dc.identifier.urlhttp://ecst.ecsdl.org/content/75/7/43.full.pdf+html
dc.source.beginpage43
dc.source.conferenceProcessing Materials of 3D Interconnects, Damascene and Electronics Packaging 8
dc.source.conferencedate2/10/2016
dc.source.conferencelocationHonolulu, HI United States
dc.source.endpage46
dc.title

Copper oxide direct bonding of 200 mm CMOS wafers with five metal levels and TSVs: morphological and electrical characterization

dc.typeProceedings paper
dspace.entity.typePublication
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