Publication:

Device breakdown optimization of Al2O3/GaN E-mode MISFETs

Date

2016
Proceedings Paper
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dc.contributor.authorKang, Xuanwu
dc.contributor.authorWellekens, Dirk
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorRonchi, Nicolo
dc.contributor.authorWu, Tian-Li
dc.contributor.authorYou, Shuzhen
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorHu, Jie
dc.contributor.authorMarcon, Denis
dc.contributor.authorStoffels, Steve
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorRonchi, Nicolo
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecRonchi, Nicolo::0000-0002-7961-4077
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-23T11:38:10Z
dc.date.available2021-10-23T11:38:10Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26800
dc.identifier.urlMISFETs http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=7574589
dc.source.beginpageCD-5
dc.source.conferenceIEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate17/04/2016
dc.source.conferencelocationPasadena, CA USA
dc.title

Device breakdown optimization of Al2O3/GaN E-mode MISFETs

dc.typeProceedings paper
dspace.entity.typePublication
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