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Gate voltage influence on the channel hot-carrier degradation of high-k-based devices
Publication:
Gate voltage influence on the channel hot-carrier degradation of high-k-based devices
Date
2011
Journal article
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Amat, Esteve
;
Kauerauf, Thomas
;
Degraeve, Robin
;
Rodríguez, Rosana
;
Nafria, Montse
;
Aymerich, Xavier
;
Groeseneken, Guido
Journal
IEEE Transactions on Device and Materials Reliability
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1959
since deposited on 2021-10-19
Acq. date: 2025-10-24
Citations
Metrics
Views
1959
since deposited on 2021-10-19
Acq. date: 2025-10-24
Citations