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Structural and electrical properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53)

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dc.contributor.authorHurley, P.K.
dc.contributor.authorO'Connor, E.
dc.contributor.authorMonaghan, S.
dc.contributor.authorLong, R.D.
dc.contributor.authorO'Mahony, A.
dc.contributor.authorPovey, I.M.
dc.contributor.authorCherkaoui, K.
dc.contributor.authorMacHale, J.
dc.contributor.authorQuinn, A.J.
dc.contributor.authorBrammertz, Guy
dc.contributor.authorHeyns, Marc
dc.contributor.authorNewcomb, S.B.
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorSonnet, A.M.
dc.contributor.authorGalatage, R.V.
dc.contributor.authorJivani, M.N.
dc.contributor.authorVogel, E.M.
dc.contributor.authorWallace, R.M.
dc.contributor.authorPemble, M.E.
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.date.accessioned2021-10-17T23:03:05Z
dc.date.available2021-10-17T23:03:05Z
dc.date.embargo9999-12-31
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15509
dc.source.beginpage113
dc.source.conferenceHigh Dielectric Constant Materials and Gate Stacks 7
dc.source.conferencedate4/10/2009
dc.source.conferencelocationVienna Austria
dc.source.endpage127
dc.title

Structural and electrical properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53)

dc.typeProceedings paper
dspace.entity.typePublication
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