Publication:

The improvement of subthreshold slope and trans-conductance of P-type bulk Si field-effect-transistors by solid-source doping

Date

2017
Journal article
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dc.contributor.authorKikuchi, Yoshiaki
dc.contributor.authorChiarella, Thomas
dc.contributor.authorDe Roest, David
dc.contributor.authorKenis, Karine
dc.contributor.authorOng, Patrick
dc.contributor.authorHoriguchi, Naoto
dc.contributor.imecauthorKikuchi, Yoshiaki
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorDe Roest, David
dc.contributor.imecauthorKenis, Karine
dc.contributor.imecauthorOng, Patrick
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.contributor.orcidimecOng, Patrick::0000-0002-2072-292X
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-24T06:53:50Z
dc.date.available2021-10-24T06:53:50Z
dc.date.issued2017
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28677
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7907254/
dc.source.beginpage2492
dc.source.endpage2497
dc.source.issue6
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume64
dc.title

The improvement of subthreshold slope and trans-conductance of P-type bulk Si field-effect-transistors by solid-source doping

dc.typeJournal article
dspace.entity.typePublication
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