Publication:

A 70nm vertical Si/Si1-xGex heterojunction pMOSFET with reduced DIBL sensitivity for VLSI applications

Date

 
dc.contributor.authorVerheyen, Peter
dc.contributor.authorCollaert, Nadine
dc.contributor.authorCaymax, Matty
dc.contributor.authorLoo, Roger
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorVan Rossum, Marc
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-14T11:55:16Z
dc.date.available2021-10-14T11:55:16Z
dc.date.embargo9999-12-31
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4005
dc.source.conferenceSilicon Nanoelectronics Workshop Abstracts
dc.source.conferencedate12/06/1999
dc.source.conferencelocationKyoto Japan
dc.title

A 70nm vertical Si/Si1-xGex heterojunction pMOSFET with reduced DIBL sensitivity for VLSI applications

dc.typeProceedings paper
dspace.entity.typePublication
Files

Original bundle

Name:
3973.pdf
Size:
251.43 KB
Format:
Adobe Portable Document Format
Publication available in collections: