Publication:
Low leakage high breakdown E-mode GaN DHFET on Si by selective removal of in-situ grown Si3N4
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1937 since deposited on 2021-10-17
2last month
Acq. date: 2025-12-10
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Metrics
Views
1937 since deposited on 2021-10-17
2last month
Acq. date: 2025-12-10
Citations