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Low leakage high breakdown E-mode GaN DHFET on Si by selective removal of in-situ grown Si3N4
Publication:
Low leakage high breakdown E-mode GaN DHFET on Si by selective removal of in-situ grown Si3N4
Date
2009-12
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Derluyn, Joff
;
Van Hove, Marleen
;
Visalli, Domenica
;
Lorenz, Anne
;
Marcon, Denis
;
Srivastava, Puneet
;
Geens, Karen
;
Sijmus, Bram
;
Viaene, John
;
Kang, Xuanwu
;
Das, Jo
;
Medjdoub, Farid
;
Cheng, Kai
;
Degroote, Stefan
;
Leys, Maarten
;
Borghs, Gustaaf
;
Germain, Marianne
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1934
since deposited on 2021-10-17
Acq. date: 2025-10-23
Citations
Metrics
Views
1934
since deposited on 2021-10-17
Acq. date: 2025-10-23
Citations