Publication:

Ascertaining the nature and distribution of extended crystalline defects in emerging semiconductor materials using electron channeling constrast imaging

Date

2018
Proceedings Paper
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dc.contributor.authorSchulze, Andreas
dc.contributor.authorHan, Han
dc.contributor.authorStrakos, Libor
dc.contributor.authorVystavel, Tomas
dc.contributor.authorPorret, Clément
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.imecauthorHan, Han
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecHan, Han::0000-0003-2169-8332
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-26T03:31:24Z
dc.date.available2021-10-26T03:31:24Z
dc.date.embargo9999-12-31
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31747
dc.identifier.urlhttp://ecst.ecsdl.org/content/86/7/387.full.pdf+html
dc.source.beginpage387
dc.source.conferenceSiGe, Ge, and Related Materials: Materials, Processing, and Devices 8
dc.source.conferencedate30/09/2018
dc.source.conferencelocationCancun Mexico
dc.source.endpage396
dc.title

Ascertaining the nature and distribution of extended crystalline defects in emerging semiconductor materials using electron channeling constrast imaging

dc.typeProceedings paper
dspace.entity.typePublication
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