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On the impact of the Si passivation layer thickness on the NBTI of nanoscaled Si0.45Ge0.55 pMOSFETs
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On the impact of the Si passivation layer thickness on the NBTI of nanoscaled Si0.45Ge0.55 pMOSFETs
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Date
2011
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Franco, Jacopo
;
Kaczer, Ben
;
Toledano Luque, Maria
;
Roussel, Philippe
;
Hehenberger, Philip
;
Grasser, Tibor
;
Mitard, Jerome
;
Eneman, Geert
;
Witters, Liesbeth
;
Hoffmann, Thomas Y.
;
Groeseneken, Guido
Journal
Microelectronic Engineering
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1891
since deposited on 2021-10-19
Acq. date: 2025-12-15
Citations
Metrics
Views
1891
since deposited on 2021-10-19
Acq. date: 2025-12-15
Citations