Publication:

Strained germanium gate-all-around pMOS device demonstration using selective wire release etch prior to replacement metal gate deposition

Date

2017
Journal article
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dc.contributor.authorWitters, Liesbeth
dc.contributor.authorArimura, Hiroaki
dc.contributor.authorSebaai, Farid
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorMilenin, Alexey
dc.contributor.authorLoo, Roger
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorEneman, Geert
dc.contributor.authorSchram, Tom
dc.contributor.authorWostyn, Kurt
dc.contributor.authorDevriendt, Katia
dc.contributor.authorSchulze, Andreas
dc.contributor.authorLieten, Ruben
dc.contributor.authorBilodeau, S
dc.contributor.authorCooper, E
dc.contributor.authorStorck, Peter
dc.contributor.authorChiu, Eddy
dc.contributor.authorVrancken, Christa
dc.contributor.authorFavia, Paola
dc.contributor.authorVancoille, Eric
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorSebaai, Farid
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorMilenin, Alexey
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorWostyn, Kurt
dc.contributor.imecauthorDevriendt, Katia
dc.contributor.imecauthorLieten, Ruben
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorVancoille, Eric
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorLanger, Robert
dc.contributor.imecauthorOpdebeeck, Ann
dc.contributor.imecauthorHolsteyns, Frank
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecMilenin, Alexey::0000-0003-0747-0462
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecWostyn, Kurt::0000-0003-3995-0292
dc.contributor.orcidimecDevriendt, Katia::0000-0002-0662-7926
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-24T19:03:52Z
dc.date.available2021-10-24T19:03:52Z
dc.date.embargo9999-12-31
dc.date.issued2017
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29944
dc.identifier.urlhttp://ieeexplore.ieee.org/document/8061030/
dc.source.beginpage4587
dc.source.endpage4593
dc.source.issue4
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume64
dc.title

Strained germanium gate-all-around pMOS device demonstration using selective wire release etch prior to replacement metal gate deposition

dc.typeJournal article
dspace.entity.typePublication
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