Publication:

Wide Vfb and Vth tunability for metal-gated MOS devices with HfLaO gate dielectrics

Date

2007-04
Journal article
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dc.contributor.authorWang, X.P.
dc.contributor.authorYu, HongYu
dc.contributor.authorLi, M.F
dc.contributor.authorZhu, C.X.
dc.contributor.authorBiesemans, Serge
dc.contributor.authorChin, A.
dc.contributor.authorSun, Y.
dc.contributor.authorFeng, Y.
dc.contributor.authorLim, A.
dc.contributor.authorYeo, Y.C.
dc.contributor.authorLoh, W.Y.
dc.contributor.authorLo, G.Q.
dc.contributor.authorKwong, D.L
dc.contributor.imecauthorBiesemans, Serge
dc.date.accessioned2021-10-16T21:40:06Z
dc.date.available2021-10-16T21:40:06Z
dc.date.issued2007-04
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13215
dc.source.beginpage258
dc.source.endpage260
dc.source.issue4
dc.source.journalIEEE Electron Device Letters
dc.source.volume28
dc.title

Wide Vfb and Vth tunability for metal-gated MOS devices with HfLaO gate dielectrics

dc.typeJournal article
dspace.entity.typePublication
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