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Impact of hydrogen on oxygen precipitation and gate oxide integrity after RTA processing

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dc.contributor.authorMöller, T.
dc.contributor.authorObermeier, G.
dc.contributor.authorBearda, Twan
dc.contributor.authorHuber, A.
dc.contributor.authorSchmolke, R.
dc.contributor.authorvon Ammon, W.
dc.contributor.authorLerch, W.
dc.date.accessioned2021-10-14T17:23:54Z
dc.date.available2021-10-14T17:23:54Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5500
dc.source.beginpage127
dc.source.conferenceGADEST 2001 - Proceedings of the 9th International Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology;
dc.source.conferencelocation
dc.source.endpage132
dc.title

Impact of hydrogen on oxygen precipitation and gate oxide integrity after RTA processing

dc.typeProceedings paper
dspace.entity.typePublication
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