Publication:

First demonstration of III-V HBTs on 300mm Si substrates using nanoridge technology

Date

2019-12
Proceedings Paper
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dc.contributor.authorVais, Abhitosh
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorMols, Yves
dc.contributor.authorSibaja-Hernandez, Arturo
dc.contributor.authorWalke, Amey
dc.contributor.authorYu, Hao
dc.contributor.authorDeshpande, Paru
dc.contributor.authorBaryshnikova, Marina
dc.contributor.authorMannaert, Geert
dc.contributor.authorAlcotte, Reynald
dc.contributor.authorIngels, Mark
dc.contributor.authorWambacq, Piet
dc.contributor.authorParvais, Bertrand
dc.contributor.authorLanger, Robert
dc.contributor.authorKunert, Bernardette
dc.contributor.authorWaldron, Niamh
dc.contributor.authorCollaert, Nadine
dc.contributor.imecauthorVais, Abhitosh
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorMols, Yves
dc.contributor.imecauthorSibaja-Hernandez, Arturo
dc.contributor.imecauthorWalke, Amey
dc.contributor.imecauthorYu, Hao
dc.contributor.imecauthorDeshpande, Paru
dc.contributor.imecauthorBaryshnikova, Marina
dc.contributor.imecauthorMannaert, Geert
dc.contributor.imecauthorAlcotte, Reynald
dc.contributor.imecauthorIngels, Mark
dc.contributor.imecauthorWambacq, Piet
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.imecauthorLanger, Robert
dc.contributor.imecauthorKunert, Bernardette
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecVais, Abhitosh::0000-0002-0317-7720
dc.contributor.orcidimecYu, Hao::0000-0002-1976-0259
dc.contributor.orcidimecDeshpande, Paru::0000-0002-9693-5761
dc.contributor.orcidimecBaryshnikova, Marina::0000-0002-5945-4459
dc.contributor.orcidimecIngels, Mark::0000-0003-1939-2422
dc.contributor.orcidimecWambacq, Piet::0000-0003-4388-7257
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.contributor.orcidimecKunert, Bernardette::0000-0002-8986-4109
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-27T20:12:57Z
dc.date.available2021-10-27T20:12:57Z
dc.date.embargo9999-12-31
dc.date.issued2019-12
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34171
dc.source.beginpage178
dc.source.conference2019 IEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate7/11/2019
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage18
dc.title

First demonstration of III-V HBTs on 300mm Si substrates using nanoridge technology

dc.typeProceedings paper
dspace.entity.typePublication
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