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Characterization of the Vt-instability un SiO2 HFO2 gate dielectrics

Date

2003
Proceedings Paper
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dc.contributor.authorKerber, Andreas
dc.contributor.authorCartier, E.
dc.contributor.authorPantisano, Luigi
dc.contributor.authorRosmeulen, Maarten
dc.contributor.authorDegraeve, Robin
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMaes, Herman
dc.contributor.authorSchwalke, U.
dc.contributor.imecauthorRosmeulen, Maarten
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecRosmeulen, Maarten::0000-0002-3663-7439
dc.date.accessioned2021-10-15T05:08:09Z
dc.date.available2021-10-15T05:08:09Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7725
dc.source.beginpage41
dc.source.conferenceProceedings 41st Annual IEEE International Reliability Physics Symposium
dc.source.conferencedate30/03/2003
dc.source.conferencelocationDallas, TX USA
dc.source.endpage45
dc.title

Characterization of the Vt-instability un SiO2 HFO2 gate dielectrics

dc.typeProceedings paper
dspace.entity.typePublication
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