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Analysis of III-V oxides at high-k / InGaAs interfaces induced by metal electrodes

Date

2019
Journal article
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dc.contributor.authorYoshida, Shinichi
dc.contributor.authorLin, Dennis
dc.contributor.authorSuzuki, Rena
dc.contributor.authorMiyanami, Yuki
dc.contributor.authorCollaert, Nadine
dc.contributor.authorHosoi, Takuji
dc.contributor.authorShimura, Takayoshi
dc.contributor.authorWatanabe, Heiji
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-28T00:08:32Z
dc.date.available2021-10-28T00:08:32Z
dc.date.embargo9999-12-31
dc.date.issued2019
dc.identifier.issn0021-4922
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34492
dc.identifier.urlhttps://doi.org/10.7567/1347-4065/ab0256
dc.source.beginpage51010
dc.source.issue5
dc.source.journalJapanese Journal of Applied Physics
dc.source.volume58
dc.title

Analysis of III-V oxides at high-k / InGaAs interfaces induced by metal electrodes

dc.typeJournal article
dspace.entity.typePublication
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