Publication:
Two types of electron traps generated in the gate silicon dioxide
Date
| dc.contributor.author | Zhang, W.D. | |
| dc.contributor.author | Zhang, J.F. | |
| dc.contributor.author | Lalor, M. | |
| dc.contributor.author | Burton, D. | |
| dc.contributor.author | Groeseneken, Guido | |
| dc.contributor.author | Degraeve, Robin | |
| dc.contributor.imecauthor | Groeseneken, Guido | |
| dc.contributor.imecauthor | Degraeve, Robin | |
| dc.date.accessioned | 2021-10-15T00:12:10Z | |
| dc.date.available | 2021-10-15T00:12:10Z | |
| dc.date.issued | 2002 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/7096 | |
| dc.source.beginpage | 1868 | |
| dc.source.endpage | 1875 | |
| dc.source.issue | 11 | |
| dc.source.journal | IEEE Trans. Electron Devices | |
| dc.source.volume | 49 | |
| dc.title | Two types of electron traps generated in the gate silicon dioxide | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
| Files | ||
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