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High Ge content SGOI substrates obtained by the Ge condensation technique: a template for growth of strained epitaxial Ge

Date

2008
Journal article
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dc.contributor.authorSouriau, Laurent
dc.contributor.authorTerzieva, Valentina
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorClemente, Francesca
dc.contributor.authorBrijs, Bert
dc.contributor.authorMoussa, Alain
dc.contributor.authorMeuris, Marc
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.imecauthorSouriau, Laurent
dc.contributor.imecauthorTerzieva, Valentina
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorMoussa, Alain
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecSouriau, Laurent::0000-0002-5138-5938
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-17T10:58:10Z
dc.date.available2021-10-17T10:58:10Z
dc.date.embargo9999-12-31
dc.date.issued2008
dc.identifier.issn0040-6090
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14506
dc.source.beginpage23
dc.source.endpage26
dc.source.issue1
dc.source.journalThin Solid Films
dc.source.volume517
dc.title

High Ge content SGOI substrates obtained by the Ge condensation technique: a template for growth of strained epitaxial Ge

dc.typeJournal article
dspace.entity.typePublication
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