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Direct tunneling into the gate dielectric by both holes and electrons in an ambipolar organic memory transistor

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dc.contributor.authorDebucquoy, Maarten
dc.contributor.authorRockele, Maarten
dc.contributor.authorGenoe, Jan
dc.contributor.authorGelinck, Gerwin
dc.contributor.authorHeremans, Paul
dc.contributor.imecauthorDebucquoy, Maarten
dc.contributor.imecauthorGenoe, Jan
dc.contributor.imecauthorHeremans, Paul
dc.contributor.orcidimecDebucquoy, Maarten::0000-0001-5980-188X
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.contributor.orcidimecHeremans, Paul::0000-0003-2151-1718
dc.date.accessioned2021-10-17T21:51:44Z
dc.date.available2021-10-17T21:51:44Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15200
dc.source.beginpageB11.11
dc.source.conferenceMRS Spring Meeting Symposium B: Concepts in Molecular and Organic Electronics
dc.source.conferencedate13/04/2009
dc.source.conferencelocationSan Francisco, CA USA
dc.title

Direct tunneling into the gate dielectric by both holes and electrons in an ambipolar organic memory transistor

dc.typeMeeting abstract
dspace.entity.typePublication
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