Publication:
Some considerations on the growth of highly resistive GaN layers
Date
| dc.contributor.author | Bougrioua, Zahia | |
| dc.contributor.author | Jacobs, Koen | |
| dc.contributor.author | Cheyns, Jan | |
| dc.contributor.author | Moerman, Ingrid | |
| dc.contributor.author | Thruch, E. J. | |
| dc.contributor.author | Wallis, R. H. | |
| dc.contributor.author | Davies, R. A. | |
| dc.contributor.imecauthor | Moerman, Ingrid | |
| dc.contributor.orcidimec | Moerman, Ingrid::0000-0003-2377-3674 | |
| dc.date.accessioned | 2021-10-14T12:41:45Z | |
| dc.date.available | 2021-10-14T12:41:45Z | |
| dc.date.issued | 2000 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/4141 | |
| dc.source.conference | MRS Fall Meeting Symposium G: GaN and Related Alloys; November 26 - December 1, 2000; Boston, MA, USA. | |
| dc.source.conferencelocation | ||
| dc.title | Some considerations on the growth of highly resistive GaN layers | |
| dc.type | Oral presentation | |
| dspace.entity.type | Publication | |
| Files | ||
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