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Growth and characterization of buffer structures for AlGaN/GaN-based heterostructure field effect transistors

Date

2016
Meeting abstract
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dc.contributor.authorEickelkamp, Martin
dc.contributor.authorFahle, Dirk
dc.contributor.authorMauder, Christof
dc.contributor.authorSaripalli, Yoga
dc.contributor.authorZhao, Ming
dc.contributor.authorLiang, Hu
dc.contributor.authorKandaswamy, Prem Kumar
dc.contributor.authorHeuken, Michael
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorLiang, Hu
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.date.accessioned2021-10-23T10:43:20Z
dc.date.available2021-10-23T10:43:20Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26591
dc.source.conferenceInternational Workshop on Nitride Semiconductors - IWN
dc.source.conferencedate2/10/2016
dc.source.conferencelocationOrlando, FL USA
dc.title

Growth and characterization of buffer structures for AlGaN/GaN-based heterostructure field effect transistors

dc.typeMeeting abstract
dspace.entity.typePublication
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