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200mm Si/SiGe resonant interband tunneling diodes incorporating delta-doping layers grown by CVD

Date

2009
Meeting abstract
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dc.contributor.authorPark, Si-Young
dc.contributor.authorAnisha, R.
dc.contributor.authorBerger, Paul
dc.contributor.authorLoo, Roger
dc.contributor.authorNguyen, Duy
dc.contributor.authorTakeuchi, Shotaro
dc.contributor.authorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-18T01:29:13Z
dc.date.available2021-10-18T01:29:13Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15979
dc.identifier.urlConference Abstracts Book
dc.source.beginpage72
dc.source.conferenceAbstracts 6th International Conference on Silicon Epitaxy and Heterostructures - ICSI-6
dc.source.conferencedate17/05/2009
dc.source.conferencelocationLos Angeles, CA USA
dc.source.endpage73
dc.title

200mm Si/SiGe resonant interband tunneling diodes incorporating delta-doping layers grown by CVD

dc.typeMeeting abstract
dspace.entity.typePublication
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