Schottky contact modulation at a-GeSe/TiN interface for ovonic switching selectors

dc.contributor.author	Slassi, Amine
dc.contributor.author	Tavanti, Francesco
dc.contributor.author	Clima, Sergiu
dc.contributor.author	Garbin, Daniele
dc.contributor.author	Calzolari, Arrigo
dc.contributor.imecauthor	Clima, Sergiu
dc.contributor.imecauthor	Garbin, Daniele
dc.contributor.orcidimec	Clima, Sergiu::0000-0002-4044-9975
dc.contributor.orcidimec	Garbin, Daniele::0000-0002-5884-1043
dc.date.accessioned	2025-02-23T23:40:20Z
dc.date.available	2025-02-23T23:40:20Z
dc.date.issued	2025-APR 30
dc.description.wosFundingText	This work was supported by the OPENMODEL project (H2020-NMBP-953167).
dc.identifier.doi	10.1016/j.apsusc.2025.162455
dc.identifier.issn	0169-4332
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/45241
dc.publisher	ELSEVIER
dc.source.journal	APPLIED SURFACE SCIENCE
dc.source.numberofpages	8
dc.source.volume	689
dc.subject.keywords	ELECTRONIC-PROPERTIES
dc.subject.keywords	TITANIUM NITRIDE
dc.subject.keywords	WORK FUNCTION
dc.subject.keywords	DEPOSITION
dc.subject.keywords	SURFACE
dc.subject.keywords	MEMORY
dc.subject.keywords	BULK
dc.subject.keywords	TIN
dc.title	Schottky contact modulation at a-GeSe/TiN interface for ovonic switching selectors
dc.type	Journal article
dspace.entity.type	Publication
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