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200 mm Germanium-on-insulator(GeOI) by smart cut technology and recent GeOI MOSFETs achievements

dc.contributor.authorAkatsu, T.
dc.contributor.authorDeguet, C.
dc.contributor.authorSanchez, L.
dc.contributor.authorRichtarch, C.
dc.contributor.authorAllibert, F.
dc.contributor.authorLetertre, F.
dc.contributor.authorMazure, C.
dc.contributor.authorKernevez, N.
dc.contributor.authorClavelier, L.
dc.contributor.authorLe Royer, C.
dc.contributor.authorHartmann, J.M.
dc.contributor.authorLoup, V.
dc.contributor.authorMeuris, Marc
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorRaskin, G.
dc.date.accessioned2021-10-16T00:42:37Z
dc.date.available2021-10-16T00:42:37Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10012
dc.sourceIIOimport
dc.title200 mm Germanium-on-insulator(GeOI) by smart cut technology and recent GeOI MOSFETs achievements
dc.typeProceedings paper
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.source.peerreviewno
dc.source.beginpage137
dc.source.endpage138
dc.source.conferenceProceedings of the IEEE International SOI Conference
dc.source.conferencedate3/10/2005
dc.source.conferencelocationHonolulu, HI USA
imec.availabilityPublished - imec


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