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Compensating mask topography effects in CPL through-pitch solutions toward the 45nm node

dc.contributor.authorBekaert, Joost
dc.contributor.authorPhilipsen, Vicky
dc.contributor.authorVandenberghe, Geert
dc.contributor.authorvan den Broeke, Doug
dc.contributor.authorDegel, Wolfgang
dc.contributor.authorZibold, Axel
dc.date.accessioned2021-10-16T00:44:57Z
dc.date.available2021-10-16T00:44:57Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10077
dc.sourceIIOimport
dc.titleCompensating mask topography effects in CPL through-pitch solutions toward the 45nm node
dc.typeProceedings paper
dc.contributor.imecauthorBekaert, Joost
dc.contributor.imecauthorPhilipsen, Vicky
dc.contributor.imecauthorVandenberghe, Geert
dc.contributor.orcidimecBekaert, Joost::0000-0003-3075-3479
dc.contributor.orcidimecPhilipsen, Vicky::0000-0002-2959-432X
dc.source.peerreviewno
dc.source.beginpage59921O
dc.source.conference25th Annual BACUS Symposium on Photomask Technology
dc.source.conferencedate3/10/2005
dc.source.conferencelocationMonterey, CA USA
imec.availabilityPublished - imec
imec.internalnotesProceedings of SPIE; Vol.


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