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New CoSi2 SALICIDE technology for 0.1 µm processes and below

dc.contributor.authorWang, Qingfeng
dc.contributor.authorMaex, Karen
dc.contributor.authorKubicek, Stefan
dc.contributor.authorJonckheere, Rik
dc.contributor.authorKerkwijk, Bas
dc.contributor.authorVerbeeck, Rita
dc.contributor.authorBiesemans, Serge
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-09-29T13:25:17Z
dc.date.available2021-09-29T13:25:17Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1007
dc.sourceIIOimport
dc.titleNew CoSi2 SALICIDE technology for 0.1 µm processes and below
dc.typeProceedings paper
dc.contributor.imecauthorMaex, Karen
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorJonckheere, Rik
dc.contributor.imecauthorVerbeeck, Rita
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecJonckheere, Rik::0000-0003-2211-9443
dc.source.peerreviewno
dc.source.beginpage17
dc.source.endpage18
dc.source.conference1995 Symposium on VLSI Technology. Digest of Technical Papers; 6-8 June 1995; Kyoto, Japan.
dc.source.conferencelocation
imec.availabilityPublished - imec


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