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Growth of strained Si on He ion implanted Si/SiGe heterostructures

dc.contributor.authorBuca, D.
dc.contributor.authorFeste, S.
dc.contributor.authorHollander, B.
dc.contributor.authorMantl, S.
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorCarius, R.
dc.contributor.authorSchaefer, H.
dc.date.accessioned2021-10-16T00:51:38Z
dc.date.available2021-10-16T00:51:38Z
dc.date.issued2005-04
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10167
dc.sourceIIOimport
dc.titleGrowth of strained Si on He ion implanted Si/SiGe heterostructures
dc.typeProceedings paper
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.beginpage11
dc.source.endpage14
dc.source.conference6th European Conference on Integration in Silicon - ULIS
dc.source.conferencedate7/04/2005
dc.source.conferencelocationBologna Italy
imec.availabilityPublished - imec


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