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Effect of varying the initial conditions prior to flash-assist rapid thermal processing on dopant activation, diffusion, and defect populations

dc.contributor.authorCamillo-Castillo, Renata
dc.contributor.authorLaw, M.E.
dc.contributor.authorLindsay, Richard
dc.contributor.authorMaex, Karen
dc.contributor.authorPawlak, Bartek
dc.contributor.authorMcCoy, S.
dc.date.accessioned2021-10-16T00:52:05Z
dc.date.available2021-10-16T00:52:05Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10172
dc.sourceIIOimport
dc.titleEffect of varying the initial conditions prior to flash-assist rapid thermal processing on dopant activation, diffusion, and defect populations
dc.typeOral presentation
dc.contributor.imecauthorMaex, Karen
dc.contributor.imecauthorPawlak, Bartek
dc.source.peerreviewno
dc.source.conference8th International Workshop on the Fabrication, Characterization and Modeling of Ultra-Shallow Junctions in Semiconductors
dc.source.conferencedate5/06/2005
dc.source.conferencelocationDaytona Beach, FL USA
imec.availabilityPublished - imec


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