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Thin SiGe strain-relaxed buffer layers: relaxation mechanism and integration in strained Si MOS-FETs

dc.contributor.authorCaymax, Matty
dc.contributor.authorDelhougne, Romain
dc.contributor.authorLoo, Roger
dc.contributor.authorEneman, Geert
dc.contributor.authorVerheyen, Peter
dc.contributor.authorRies, Michael
dc.contributor.authorLuysberg, Martina
dc.date.accessioned2021-10-16T00:54:38Z
dc.date.available2021-10-16T00:54:38Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10197
dc.sourceIIOimport
dc.titleThin SiGe strain-relaxed buffer layers: relaxation mechanism and integration in strained Si MOS-FETs
dc.typeOral presentation
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.source.peerreviewno
dc.source.conferenceInstitute of Thin Films and Interfaces
dc.source.conferencedate28/06/2005
dc.source.conferencelocationJuelich Germany
imec.availabilityPublished - imec


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