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Hot carrier degradation on n-channel SiO2/HfSiO MOSFETs: Effects on the devices performance and lifetime

dc.contributor.authorCimino, Salvatore
dc.contributor.authorPantisano, Luigi
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorDegraeve, Robin
dc.contributor.authorKwak, Dong Hwa
dc.contributor.authorCrupi, Felice
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorPaccagnella, A.
dc.date.accessioned2021-10-16T00:58:23Z
dc.date.available2021-10-16T00:58:23Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10230
dc.sourceIIOimport
dc.titleHot carrier degradation on n-channel SiO2/HfSiO MOSFETs: Effects on the devices performance and lifetime
dc.typeProceedings paper
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.source.peerreviewno
dc.source.beginpage275
dc.source.endpage279
dc.source.conference43rd Annual IEEE International Reliability Physics Symposium Proceedings
dc.source.conferencedate17/04/2005
dc.source.conferencelocationSan Jose, CA USA
imec.availabilityPublished - imec


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