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Selective wet removal of Hf-based layers and post-dry etch residues in high-k and metal gate stacks

dc.contributor.authorClaes, Martine
dc.contributor.authorParaschiv, Vasile
dc.contributor.authorBeckx, Stephan
dc.contributor.authorDemand, Marc
dc.contributor.authorDeweerd, Wim
dc.contributor.authorGaraud, Sylvain
dc.contributor.authorKraus, Harald
dc.contributor.authorVos, Rita
dc.contributor.authorSnow, Jim
dc.contributor.authorBoullart, Werner
dc.contributor.authorDe Gendt, Stefan
dc.date.accessioned2021-10-16T00:58:32Z
dc.date.available2021-10-16T00:58:32Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10231
dc.sourceIIOimport
dc.titleSelective wet removal of Hf-based layers and post-dry etch residues in high-k and metal gate stacks
dc.typeProceedings paper
dc.contributor.imecauthorClaes, Martine
dc.contributor.imecauthorParaschiv, Vasile
dc.contributor.imecauthorBeckx, Stephan
dc.contributor.imecauthorDemand, Marc
dc.contributor.imecauthorVos, Rita
dc.contributor.imecauthorBoullart, Werner
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage93
dc.source.endpage96
dc.source.conferenceUltra Clean Processing of Silicon Surfaces VII: Proceedings of the 7th International Symposium
dc.source.conferencedate20/09/2004
dc.source.conferencelocationBrussels Belgium
imec.availabilityPublished - imec
imec.internalnotesSolid State Phenomena; Vol 103-104


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