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Tall triple-gate device with TiN/HfO2 gate stack

dc.contributor.authorCollaert, Nadine
dc.contributor.authorDemand, Marc
dc.contributor.authorFerain, Isabelle
dc.contributor.authorLisoni, Judit
dc.contributor.authorSinganamalla, Raghunath
dc.contributor.authorZimmerman, Paul
dc.contributor.authorYim, Yong Sik
dc.contributor.authorSchram, Tom
dc.contributor.authorMannaert, Geert
dc.contributor.authorGoodwin, Michael
dc.contributor.authorHooker, Jacob
dc.contributor.authorNeuilly, Francois
dc.contributor.authorKim, Myeong-Cheol
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorBoullart, Werner
dc.contributor.authorJurczak, Gosia
dc.contributor.authorBiesemans, Serge
dc.date.accessioned2021-10-16T01:00:36Z
dc.date.available2021-10-16T01:00:36Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10246
dc.sourceIIOimport
dc.titleTall triple-gate device with TiN/HfO2 gate stack
dc.typeProceedings paper
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorDemand, Marc
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorMannaert, Geert
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorBoullart, Werner
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.source.peerreviewno
dc.source.beginpage108
dc.source.endpage109
dc.source.conferenceSymposium on VLSI Technology. Digest of Technical Papers
dc.source.conferencedate14/06/2005
dc.source.conferencelocationKyoto Japan
imec.availabilityPublished - imec


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