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Improving the growth of HfO2 ALD layers by modifying growth parameters and reducing precursors contaminants

dc.contributor.authorConard, Thierry
dc.contributor.authorDelabie, Annelies
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-16T01:01:22Z
dc.date.available2021-10-16T01:01:22Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10252
dc.sourceIIOimport
dc.titleImproving the growth of HfO2 ALD layers by modifying growth parameters and reducing precursors contaminants
dc.typeProceedings paper
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.source.peerreviewno
dc.source.conferenceSIMS XV - 15th International Conference on Secondary Ion Mass Spectrometry
dc.source.conferencedate12/09/2005
dc.source.conferencelocationManchester UK
imec.availabilityPublished - imec


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