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Electrical and physical characterization of MOSFETs with MBE grown La2HfO7 and HfO2 high-k dielectrics integrated in a conventional flow

dc.contributor.authorConard, Thierry
dc.contributor.authorPantisano, Luigi
dc.contributor.authorClaes, Martine
dc.contributor.authorDemand, Marc
dc.contributor.authorDeweerd, Wim
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHoussa, Michel
dc.contributor.authorLujan, Guilherme
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorRohr, Erika
dc.contributor.authorSchram, Tom
dc.contributor.authorHooker, Jacob
dc.contributor.authorRittersma, Chris
dc.contributor.authorFompeyrinne, J.
dc.contributor.authorLoquet, J.P.
dc.date.accessioned2021-10-16T01:01:32Z
dc.date.available2021-10-16T01:01:32Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10253
dc.sourceIIOimport
dc.titleElectrical and physical characterization of MOSFETs with MBE grown La2HfO7 and HfO2 high-k dielectrics integrated in a conventional flow
dc.typeOral presentation
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorClaes, Martine
dc.contributor.imecauthorDemand, Marc
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorSchram, Tom
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.source.peerreviewno
dc.source.conferenceWorkshop "Nouveaux Oxides à Forte Permittivité dans l'Intégration des Semiconducteurs"
dc.source.conferencedate30/01/2005
dc.source.conferencelocationAutrans France
imec.availabilityPublished - imec


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