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Physical properties of thin nitrided Hf silicates and their impact on the performance of advanced transistors having a TaN metal gate electrode

dc.contributor.authorCubaynes, Florence
dc.contributor.authorvan der marel, C.
dc.contributor.authorHopstaken, M.J.P.
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorEveraert, Jean-Luc
dc.contributor.authorSchaekers, Marc
dc.date.accessioned2021-10-16T01:03:48Z
dc.date.available2021-10-16T01:03:48Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10270
dc.sourceIIOimport
dc.titlePhysical properties of thin nitrided Hf silicates and their impact on the performance of advanced transistors having a TaN metal gate electrode
dc.typeOral presentation
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorEveraert, Jean-Luc
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.source.peerreviewno
dc.source.conferenceMRS Spring Meeting Symposium G: Advanced Gate Dielectric Stacks on High-Mobility Semiconductors
dc.source.conferencedate28/03/2005
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec
imec.internalnotesPaper G14.4


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