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Improvement of ohmic contacts on AlGaN/GaN HEMT's by using in-situ Si3N4 passivation layer
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1958 since deposited on 2021-10-16
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Acq. date: 2026-01-10
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1958 since deposited on 2021-10-16
1last month
1last week
Acq. date: 2026-01-10
Citations