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Improvement of ohmic contacts on AlGaN/GaN HEMT's by using in-situ Si3N4 passivation layer

dc.contributor.authorDerluyn, Joff
dc.contributor.authorVan Daele, Benny
dc.contributor.authorBoeykens, Steven
dc.contributor.authorCheng, Kai
dc.contributor.authorRuythooren, Wouter
dc.contributor.authorLeys, Maarten
dc.contributor.authorGermain, Marianne
dc.contributor.authorVan Tendeloo, Gustaaf
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-16T01:20:29Z
dc.date.available2021-10-16T01:20:29Z
dc.date.issued2005-06
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10377
dc.sourceIIOimport
dc.titleImprovement of ohmic contacts on AlGaN/GaN HEMT's by using in-situ Si3N4 passivation layer
dc.typeProceedings paper
dc.contributor.imecauthorRuythooren, Wouter
dc.contributor.imecauthorBorghs, Gustaaf
dc.source.peerreviewyes
dc.source.beginpageI01
dc.source.conference11th European Workshop on MOVPE
dc.source.conferencedate5/06/2005
dc.source.conferencelocationLausanne Switzerland
imec.availabilityPublished - imec


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