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A practical alternating PSM modeling and OPC approach to deal with 3D mask effects for the 65nm node and beyond

dc.contributor.authorDrapeau, Martin
dc.contributor.authorvan Adrichem, Paul.J.M.
dc.contributor.authorVan Look, Lieve
dc.contributor.authorKasprowicz, Bryan S.
dc.date.accessioned2021-10-16T01:25:12Z
dc.date.available2021-10-16T01:25:12Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10403
dc.sourceIIOimport
dc.titleA practical alternating PSM modeling and OPC approach to deal with 3D mask effects for the 65nm node and beyond
dc.typeProceedings paper
dc.contributor.imecauthorVan Look, Lieve
dc.source.peerreviewno
dc.source.beginpage59921T
dc.source.conference25th Annual BACUS Symposium on Photomask Technology
dc.source.conferencedate3/10/2005
dc.source.conferencelocationMonterey, CA USA
imec.availabilityPublished - imec
imec.internalnotesProceedings of SPIE; Vol. 5992


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