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N+/P and P+/N junctions in strained Si on thin Strain Relaxed SiGe buffers: the effect of defect density and layer structure

dc.contributor.authorEneman, Geert
dc.contributor.authorSimoen, Eddy
dc.contributor.authorDelhougne, Romain
dc.contributor.authorVerheyen, Peter
dc.contributor.authorRies, Michael
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-16T01:30:02Z
dc.date.available2021-10-16T01:30:02Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10429
dc.sourceIIOimport
dc.titleN+/P and P+/N junctions in strained Si on thin Strain Relaxed SiGe buffers: the effect of defect density and layer structure
dc.typeProceedings paper
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.beginpage119
dc.source.endpage124
dc.source.conferenceSemiconductor Defect Engineering - Materials, Synthetic Structures, and Devices
dc.source.conferencedate28/03/2005
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec
imec.internalnotesMRS Symposium Proceedings; Vol. 864


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