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GIDL (gate-induced drain leakage) and parasitic Schottky barrier leakage elimination in aggressively scaled HfO2/TiN FiNFET devices

dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorDoornbos, Gerben
dc.contributor.authorFerain, Isabelle
dc.contributor.authorCollaert, Nadine
dc.contributor.authorZimmerman, Paul
dc.contributor.authorGoodwin, Michael
dc.contributor.authorRooyackers, Rita
dc.contributor.authorKottantharayil, Anil
dc.contributor.authorYim, Yong Sik
dc.contributor.authorDixit, Abhisek
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorJurczak, Gosia
dc.contributor.authorBiesemans, Serge
dc.date.accessioned2021-10-16T02:07:17Z
dc.date.available2021-10-16T02:07:17Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10599
dc.sourceIIOimport
dc.titleGIDL (gate-induced drain leakage) and parasitic Schottky barrier leakage elimination in aggressively scaled HfO2/TiN FiNFET devices
dc.typeProceedings paper
dc.contributor.imecauthorDoornbos, Gerben
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewno
dc.source.beginpage30/05/2001
dc.source.endpage30/05/2004
dc.source.conferenceTechnical Digest International Electron Devices Meeting (IEDM)
dc.source.conferencedate5/12/2005
dc.source.conferencelocationWashington, D.C. USA
imec.availabilityPublished - imec


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