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P-N junction diode fabricated based on donor formation in plasma hydrogenated P-type czochralski silicon

dc.contributor.authorHuang, Y.L.
dc.contributor.authorJob, R.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorMa, Y.
dc.contributor.authorDungen, W.
dc.contributor.authorFahrner, W.R.
dc.contributor.authorVersluijs, Janko
dc.contributor.authorClauws, P.
dc.date.accessioned2021-10-16T02:12:14Z
dc.date.available2021-10-16T02:12:14Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10619
dc.sourceIIOimport
dc.titleP-N junction diode fabricated based on donor formation in plasma hydrogenated P-type czochralski silicon
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorVersluijs, Janko
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpageE9.26
dc.source.conferenceSemiconductor Defect Engineering - Materials, Synthetic Structures, and Devices
dc.source.conferencedate28/03/2005
dc.source.conferencelocationSan Francisco USA
imec.availabilityPublished - imec
imec.internalnotesMaterials Research Society Symposium Proceedings; Vol. 864


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