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dc.contributor.authorJanssens, Tom
dc.contributor.authorHuyghebaert, Cedric
dc.contributor.authorVanhaeren, Danielle
dc.contributor.authorWinderickx, Gillis
dc.contributor.authorSatta, Alessandra
dc.contributor.authorMeuris, Marc
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-16T02:18:37Z
dc.date.available2021-10-16T02:18:37Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10644
dc.sourceIIOimport
dc.titleHeavy ion implantation in Ge: dramatic radiation induced morphology in Ge
dc.typeOral presentation
dc.contributor.imecauthorHuyghebaert, Cedric
dc.contributor.imecauthorVanhaeren, Danielle
dc.contributor.imecauthorWinderickx, Gillis
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecHuyghebaert, Cedric::0000-0001-6043-7130
dc.contributor.orcidimecVanhaeren, Danielle::0000-0001-8624-9533
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.source.peerreviewno
dc.source.conference8th International Workshop on the Fabrication, Characterization and Modeling of Ultra-Shallow Junctions in Semiconductors
dc.source.conferencedate5/06/2005
dc.source.conferencelocationDaytona Beach, FL USA
imec.availabilityPublished - imec


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